Modeling and Simulation of Quantum-Well Infrared Photodetectors

被引：0
|
作者：
Chen, Sao-Jie [1 ]
Yang, Hsin-Ping [1 ]
Lin, Ding-Jyun [1 ]
Liu, Grace [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei, Taiwan
来源：
2016 29TH IEEE INTERNATIONAL SYSTEM-ON-CHIP CONFERENCE (SOCC) | 2016年
关键词：
Quantum well infrared photodetector; Superlattke; Dark current; SPICE modeling; CIRCUIT MODEL;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantum-well infrared photodetectors (QWIPs) have become research focus in recent years due to its many inherent properties. However, the measurement of internal parameters is very difficult; instead, computer simulation and device modeling provide a better way to analyze quantum structure devices. In order to solve this issue, the electronics performance and the optical performance of a QWIP fabricated with GaAs/AIGaAs superlattice material are evaluated. And the characteristics of this QWIP are theoretically analyzed and studied by numerical simulation with MATLAB. A Graphical User Interface (GUI) and SPICE-compatible model are then built for front-end and back-end designers to use. Besides, QWIPs with different quantum structures are compared and theoretically analyzed by simulation. Provided with these design-automation tools, we can accelerate the device development process. In addition, the SPICE-compatible model is used in the system-level simulation of QWIP device together with the design of a readout integrated circuit (ROIC) in HSPICE.
引用
收藏
页码：265 / 270
页数：6
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