Ultrathin Cu(In,Ga)Se2 solar cells with Ag-based reflective back contacts

被引：0

作者：

Gouillart, Louis ^{[1
]}

Cattoni, Andrea ^{[2
]}

Chen, Wei-Chao ^{[3
]}

Zeitouny, Joya ^{[2
]}

Riekehr, Lars ^{[3
]}

Keller, Jan ^{[3
]}

Jubault, Marie ^{[4
]}

Naghavi, Negar ^{[5
]}

Edoff, Marika ^{[3
]}

Collin, Stephane ^{[2
]}

机构：

[1] Ctr Nanosci & Nanotechnol C2N, Inst Photovolta Ile France IPVF, UMR CNRS, CNRS, Palaiseau, France

[2] Ctr Nanosci & Nanotechnol C2N, CNRS, Palaiseau, France

[3] Uppsala Univ, Angstrom Solar Ctr, Uppsala, Sweden

[4] IPVF, EDF R&D, Palaiseau, France

[5] Inst Photovolta Ile France IPVF, UMR CNRS, Palaiseau, France

来源：

2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2020年

关键词：

Ultrathin Cu(In; Ga)Se2; (Ag; Cu)(In; light trapping; EFFICIENCY;

D O I：

10.1109/pvsc45281.2020.9300534

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We developed a highly reflective back contact for Cu(In,Ga)Se2 solar cells based on silver encapsulated in a TCOs stack, compatible with substrate configuration. We demonstrated ultrathin (500 nm) Cu(In,Ga)Se2 solar cells with 13.5% efficiency and state-of-the-art J(SC)= 28.9 mA/cm2, 2.7 mA/cm2 more than the reference cell on molybdenum. We also demonstrated a 530 nmthick (Ag,Cu)(In,Ga)Se2 solar cell on Mo with state-of-the-art efficiency (14.9%) and remarkably high VOC (741 mV) and FF (81.8%). This result coupled with a highly reflective back contact for improved JSC, has the potential for a 500 nm-thick (Ag,Cu)(In,Ga)Se2 solar cell with an 18% efficiency.

引用

页码：1481 / 1484

页数：4

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