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Measurement and Analysis of Gate-Induced Drain Leakage in Short-Channel Strained Silicon Germanium-on-Insulator pMOS FinFETs

被引：0
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作者：
Balakrishnan, Karthik [1 ]
Hashemi, Pouya [1 ]
Ott, John A. [1 ]
Leobandung, Effendi [1 ]
Park, Dae-Gyu [1 ]
机构：
[1] IBM Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2014年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：233 / +
页数：2
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