Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 μm probe

被引:121
|
作者
Tani, M [1 ]
Lee, KS [1 ]
Zhang, XC [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
关键词
D O I
10.1063/1.1289914
中图分类号
O59 [应用物理学];
学科分类号
摘要
THz radiation is detected by a low-temperature-grown GaAs (LT-GaAs) photoconductive antenna probed with a 1.55 mu m probe laser. The detection efficiency is found to be approximately 10% of that obtained with a 780 nm probe. From the nonquadratic dependence of photoconductivity on laser intensity, two-step photoabsorption mediated by midgap states in LT-GaAs is suggested, instead of the two-photon absorption, as the primary process for the photoconductivity. (C) 2000 American Institute of Physics. [S0003-6951(00)01335-8].
引用
收藏
页码:1396 / 1398
页数:3
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