Evaluation of high density DRAMs as a nuclear radiation detector

被引：2
|
作者：
Chou, HP [1 ]
Chou, TC [1 ]
Hau, TH [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Nucl Engn, Hsinchu 300, Taiwan
来源：
APPLIED RADIATION AND ISOTOPES | 1997年 / 48卷 / 10-12期
关键词：
D O I：
10.1016/S0969-8043(97)00160-7
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
The research is based on the nuclear radiation induced soft error phenomenon associated with dynamic random access memory devices (DRAMs). Samples of 255 kbit and 1 Mbit decapped DRAMs from several manufacturers were exposed to standard alpha sources and showed a linear response with an intrinsic detection efficiency approaching 10%. Sensitivity studies were performed to evaluate the effects of DRAM operating voltage, refresh frequency and the data pattern stored prior to irradiation. The associated mechanism of soft error phenomenon is discussed. Samples were also exposed to gamma rays up to 10(5) rad to examine the total dose effect. The annealing phenomenon after gamma exposure is also presented. (C) 1997 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1601 / 1604
页数：4
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