Inductorless Broadband Transimpedance Amplifier for 25-Gb/s NRZ and 50-Gb/s PAM-4 Operations in a 90-nm CMOS Technology

被引：0
|
作者：
Jou, Jau-Ji [1 ]
Shih, Tien-Tsorng [1 ]
Peng, Chih-Chen [1 ]
Hsu, Hao-Wen [1 ]
Ye, Xuan-Yi [1 ]
机构：
[1] Natl Kaohsiung Univ Sci & Technol, Dept Elect Engn, Kaohsiung, Taiwan
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2021年 / 21卷 / 05期
关键词：
Transimpedance amplifier (TIA); optical receiver; high-speed transmission; four-level pulse amplitude modulation (PAM-4); complementary metal-oxide-semiconductor (CMOS);
D O I：
10.5573/JSTS.2021.21.5.304
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, an inductorless broadband transimpedance amplifier (TIA) is implemented using TSMC 90-nm complementary metal-oxide-semiconductor (CMOS) technology. A regulated cascode circuit with low input impedance is used as the input stage of the TIA. The core amplifier is a fully differential amplifier with active feedback. The output stage of the TIA is an equalizer based on a differential amplifier with a source degenerated resistor and capacitor. The TIA has a bandwidth of 24.8 GHz and good linearity. In the TIA chip testing, clear 25-Gb/s nonreturn to zero and 50-Gb/s four-level pulse amplitude modulation eye diagrams can be observed.
引用
收藏
页码：304 / 310
页数：7
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