High-Performance a-IGZO TFT With ZrO2 Gate Dielectric Fabricated at Room Temperature

被引：251

作者：

Lee, Jae Sang ^{[1
,2
]}

Chang, Seongpil ^{[1
]}

Koo, Sang-Mo ^{[2
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Energy Mat Res, Seoul 136791, South Korea

[2] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 03期

关键词：

Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT); high ON current; ZrO2;

D O I：

10.1109/LED.2009.2038806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO2 gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. ZrO2 is one of the most promising high-k materials. The a-IGZO TFT (channel W/L = 240/30 mu m) with ZrO2 shows high performance such as high ON current of 2.11 mA and high field effect mobility of 28 cm(2)/(V. s) at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches.

引用

页码：225 / 227

页数：3

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