Reproducible switching in normal metal-manganite single crystal point contacts with memory effect

被引：17
|
作者：
Tulina, NA [1 ]
Zver'kov, SA
Arsenov, A
Mukovskii, YM
Shulyatev, DA
机构：
[1] RAS, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia
[2] Moscow State Steel & Alloys Inst, Moscow 119991, Russia
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2003年 / 385卷 / 04期
关键词：
narrow band systems; intermediate-valence solids; intrinsic properties of magnetically ordered materials; colossal magnetoresistance;
D O I：
10.1016/S0921-4534(02)02287-6
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The current-voltage characteristics (IVC) and transport properties of point contacts in normal metal-manganite heterojunctions have been investigated on the base of La1-xSrxMnO3, La1-xCaxMnO3, La1-xBaxMnO3 (x = 0.15-0.3) single crystals. At considerable current levels the IVC of point contacts show reproducible switching with memory effect. Negative or positive voltage switch the heterocontact resistance between high- and low-resistive states. It has been assumed that the observed current switching effects are due to phase separation of manganites under the electric current. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：563 / 567
页数：5
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