Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol

被引：15

作者：

Ghenzi, N. ^{[1
]}

Sanchez, M. J. ^{[2
,3
]}

Rozenberg, M. J. ^{[4
,5
]}

Stoliar, P. ^{[1
,6
]}

Marlasca, F. G. ^{[1
]}

Rubi, D. ^{[1
,6
]}

Levy, P. ^{[1
]}

机构：

[1] GAIANN CAC CNEA, GIA, RA-1650 San Martin, Argentina

[2] CNEA, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

[3] CNEA, Inst Balseiro, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

[4] Univ Paris 11, Lab Phys Solides, UMR8502, F-91405 Orsay, France

[5] Univ Buenos Aires, FCEN, Dept Fis Juan Jose Giambiagi, RA-1428 Buenos Aires, DF, Argentina

[6] Univ Nacl San Martin, ECyT, RA-1650 San Martin, Argentina

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 08期

关键词：

MEMORY;

D O I：

10.1063/1.4705283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We explore different resistance states of La0.325Pr0.300Ca0.375MnO3 - Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repeatedly pulsing with a single polarity. The accumulative action of successive pulsing drives the resistance towards saturation, the time constant being a strong function of the pulsing amplitude. The experiments reveal that the pulsing amplitude and the number of applied pulses necessary to reach a target high resistance value appear to be in an exponential relationship, with a rate that results independent of the resistance value. Model simulations confirm these results and provide the oxygen vacancy profiles associated to the high resistance states obtained in the experiments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4705283]

引用

页数：5

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