Silicon intersubband lasers

被引：14
|
作者：
Soref, RA [1 ]
Friedman, L
Sun, G
机构：
[1] USAF, Res Lab, Sensors Directorate, Hanscom AFB, MA 01731 USA
[2] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 02期
关键词：
semiconductor lasers; silicon; germanium; quantum wells;
D O I：
10.1006/spmi.1996.0448
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The critical design issues for unipolar silicon quantum-well intersubband lasers an investigated in this paper. Group IV lasing at near-infrared and middle-infrared wavelengths is analyzed for surface-emitting and edge-emitting geometries. Calculations show feasibility of SiGe/Si and SiGeC/Si lasing. Silicon-on-insulator structures are proposed for index-guided lasers, vertical-cavity lasers and micro-cavity lasers. (C) 1998 Academic Press Limited.
引用
收藏
页码：427 / 439
页数：13
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