Gyrokinetic microstability analyses, with and without electromagnetic effects, are presented for a spherical tokamak plasma equilibrium closely resembling that from a high confinement mode (H mode) discharge in the mega-ampere spherical tokamak (MAST) [A. Sykes , Nucl. Fusion 41, 1423 (2001)]. Electrostatic ion temperature gradient driven modes (ITG modes) were found to be unstable on all surfaces, though they are likely to be substantially stabilized by equilibrium ExB flow shear. Electron temperature gradient driven modes (ETG modes) have stronger growth rates that substantially exceed the equilibrium flow shearing rates. Mixing length arguments suggest that ITG modes would give rise to significant transport if they are not stabilized by sheared flows, and predict weak transport from ETG turbulence. Significant plasma flows have been neglected in this first analysis, and are probably important in the delicate balance between ITG growth rates and flow shear, and in the formation of internal transport barriers on MAST. Electromagnetic effects are found to be important even in this low beta discharge, especially for longer length-scale modes with k(perpendicular to)rho(i)<O(1) on the inner surfaces, where tearing parity modes are found to be the fastest growing modes, with growth rates that are sensitive to the electron collision frequency. These tearing parity microinstabilities are highly extended along the magnetic field, and have been reported in a number of spherical tokamak equilibria.
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Naka Fus Res Estab, Japan Atom Energy Res Inst, Naka, Ibaraki 3110193, JapanNaka Fus Res Estab, Japan Atom Energy Res Inst, Naka, Ibaraki 3110193, Japan
Takenaga, H
Mahdavi, MA
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Naka Fus Res Estab, Japan Atom Energy Res Inst, Naka, Ibaraki 3110193, JapanNaka Fus Res Estab, Japan Atom Energy Res Inst, Naka, Ibaraki 3110193, Japan
Mahdavi, MA
Baker, DR
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Naka Fus Res Estab, Japan Atom Energy Res Inst, Naka, Ibaraki 3110193, JapanNaka Fus Res Estab, Japan Atom Energy Res Inst, Naka, Ibaraki 3110193, Japan
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Xiang, H. M.
Zhang, T.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Zhang, T.
Ye, K. X.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Ye, K. X.
Wang, Y. M.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Wang, Y. M.
Geng, K. N.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Geng, K. N.
Wu, M. F.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Wu, M. F.
Wen, F.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Wen, F.
Liu, H. Q.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Liu, H. Q.
Shi, T. H.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Shi, T. H.
Liu, J. B.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Liu, J. B.
Han, X.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Han, X.
Li, G. S.
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Shenzhen Univ, Adv Energy Res Ctr, Shenzhen 518060, Peoples R China
Shenzhen Univ, Coll Optoelect Engn, Minist Educ & Guangdong Prov, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Li, G. S.
Zhong, F. B.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Zhong, F. B.
Huang, J.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Huang, J.
Zhang, S. B.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Zhang, S. B.
Gao, X.
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Chinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China
Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
Shenzhen Univ, Adv Energy Res Ctr, Shenzhen 518060, Peoples R ChinaChinese Acad Sci, Inst Plasma Phys, POB 1126, Hefei 230031, Anhui, Peoples R China