The effects of thermal annealing in self-assembled Ge/Si quantum dots

被引：8

作者：

Cai, Qiha ^{[1
]}

Zhou, Hao ^{[1
]}

Lu, Fang ^{[1
]}

机构：

[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 10期

基金：

中国国家自然科学基金;

关键词：

quantum dots; thermal annealing; Raman spectra; PL spectra; strain relaxation;

D O I：

10.1016/j.apsusc.2006.10.045

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effects of thermal annealing in Si base self-assembled Ge dots have been investigated by Raman spectra and PL spectra. An obvious Raman frequency shift under different annealing temperature can be observed. There are two main effects during the annealing procession: one is the inter-diffusion of the Si and Ge quantum dots; the other is the relaxation of the elastic strain. With the calculated results, PL blue shift can be related to strain relaxation effects, and/or a general decrease of Ge content due to the Ge-Si intermixing. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：4792 / 4795

页数：4

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