Extraction method for substrate resistance of RF MOSFETs

被引：0
|
作者：
Han, JH [1 ]
Je, M [1 ]
Shin, H [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept EECS, Yusong Gu, Taejon 305701, South Korea
来源：
ICMTS 2002:PROCEEDINGS OF THE 2002 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper proposes a simple and accurate method for extracting substrate resistance of an RF MOSFET from the measured network parameters. The extraction results for 0.18-mum MOSFETs are presented for various bias conditions and devices with different geometries.
引用
收藏
页码：37 / 40
页数：4
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