Synthesis, Structural and Dielectric properties of Double Perovskite Ho2FeMnO6

被引:1
|
作者
Chakraborty, Tirthankar [1 ]
Elizabeth, Suja [1 ]
机构
[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
关键词
D O I
10.1063/1.4946187
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new double perovskite Ho2FeMnO6 was grown by nitrate route. Temperature dependent dielectric response was recorded at different frequencies. Relaxor-like-behavior is observed whose activation energy was calculated using Arrhenius equation. The dispersion is very small at room temperature. The Nyquist plot over a broad frequency range at room temperature provides evidence for the presence of three relaxations from sample electrode interface, grain boundary and grain. The corresponding values of resistance and capacitance were calculated from the equivalent circuit model analysis of the Nyquist plot.
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页数:4
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