Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching

被引：5

作者：

Chavarria, M. A. ^{[1
,2
]}

Fonthal, F. ^{[1
]}

机构：

[1] Univ Autonoma Occidente, Dept Automat & Elect, Adv Mat Micro & Nanotechnol Res Grp IMAMNT, Valle Del Cauca 760030, Colombia

[2] Ecole Polytech Fed Lausanne, Microsyst Lab LMIS, CH-1015 Lausanne, Switzerland

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2016年 / 5卷 / 04期

关键词：

BIOSENSORS; BEHAVIOR; MODEL;

D O I：

10.1149/2.0241604jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We presented the conduction mechanism investigation of porous silicon/p-Si heterojunction fabricated on low resistivity crystalline silicon by electrochemical anodization. Measurements of the current - voltage I(V) and capacitance - voltage C(V) characteristics were used for the study of the electrical properties of this heterojunction. A deeper understanding of the physical mechanisms involved in the Au/porous silicon contacts and porous silicon/p-Si interface can be obtained from the voltage dependence of the fitting parameters according to electrical model circuits in DC and AC. We found in the heterojunction important conduction mechanisms: the resonant tunnelling, SCLC and the dielectric relaxation due to the pores layers at high frequencies. (c) 2016 The Electrochemical Society. All rights reserved.

引用

页码：P3172 / P3175

页数：4

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