Electrical characterization of n-ZnO/p-Si heterojunction prepared by spray pyrolysis technique

被引：38
|
作者：
Bedia, F. Z. [1 ]
Bedia, A. [1 ]
Benyoucef, B. [1 ]
Hamzaoui, S. [2 ]
机构：
[1] Abou Bakr Belkaid Univ, Res Unit Mat & Renewable Energies, POB 119, Tilimsen 13000, Algeria
[2] Univ Sci & Technol Oran, Lab Electron Microscopy & Mat Sci, El Mnaouer Oran 31000, Algeria
来源：
8TH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCES, CSM8-ISM5 | 2014年 / 55卷
关键词：
ZnO/p-Si heterojunction; electricals properties; solar cell; JUNCTION SOLAR-CELLS; THIN-FILMS; FABRICATION; DEPOSITION; NANORODS;
D O I：
10.1016/j.phpro.2014.07.010
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The study reports the experimental and the electrical junction properties analysis of current-voltage characteristics of n-ZnO/p-Si heterostructures. Wide band gap semiconducting layer of n-type ZnO thin film was fabricated on p-type Si wafer with spray pyrolysis technique at 550C degrees to form n-ZnO/p-Si heterojunctions. The current-voltage characteristic of the n-Zn0/ p-Si heterojunction device has been measured at room temperature in the dark and under illumination (lamp/160 W). The characteristic parameters of the structure such as barrier height, ideality factor and series resistance were determined from the current-voltage measurement. (C) 2014 Elsevier B.V.
引用
收藏
页码：61 / 67
页数：7
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