On increasing the efficiency of a streamer semiconductor laser

被引：0
|
作者：
Rusakov, K. I. [1 ]
Parashchuk, V. V. [1 ]
机构：
[1] Stepanov Inst Phys, Minsk, BELARUS
来源：
QUANTUM ELECTRONICS | 2007年 / 37卷 / 01期
关键词：
Lamellar crystal; Limiting regime; Photo- and streamer luminescence; Rare-earth chalcogenide; Resource; Streamer discharge; Streamer laser; Wide-gap semiconductor;
D O I：
10.1070/QE2007v037n01ABEH013316
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of intense electric and optical fields produced by a streamer discharge in wide-gap semiconductors on their spectroscopic properties is studied. The effect is manifested in the reversible change of the luminescence parameters of the active medium. Methods are proposed for increasing the service life and efficiency of a streamer laser in limiting regimes, which are based on the use of semiconductor protective layers of a certain crystallographic orientation and a crystal microrelief with the size of elements of the order of the wavelength of light. Streamer emission was observed and studied in new promising Eu: CaGa2S4 and Eu: Ca4Ga 2S7 materials. © 2007 Kvantovaya Elektronika and Turpion Ltd.
引用
收藏
页码：69 / 73
页数：5
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