Effects of deposition conditions and annealing process on the infrared optical properties of diamond films grown by MPCVD

被引:0
|
作者
Wang, LJ [1 ]
Xia, YB [1 ]
Zhang, ML [1 ]
Su, QF [1 ]
Gu, BB [1 ]
Lou, YY [1 ]
机构
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
关键词
diamond film; optical properties; infrared spectroscopic ellipsometry (IRSE);
D O I
10.1117/12.608045
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of deposition conditions and annealing process on the optical properties of diamond films on silicon substrate grown by MPCVD method are investigated by infrared spectroscopic ellipsometry (2.5-12.5mum). Results indicate that the low nucleation temperature will be in favor of decreasing the infrared absorption at 3.5mum. The refractive index n of diamond films deposited under higher growth temperature will fluctuate weakly. After annealing in N-2 atmosphere an obvious improvement of the infrared optical properties is also found. After annealing the value of k was about 10(-12)similar to10(-15). However, for non-annealed diamond film, the value of k was about 10(-3)similar to10(-14). After annealing the refractive index n increased and was close to that of single crystal Type IIa natural diamond.
引用
收藏
页码:419 / 422
页数:4
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