Large Diode Sensitivity of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

被引：51

作者：

Ishibashi, Shota ^{[1
]}

Seki, Takeshi ^{[1
]}

Nozaki, Takayuki ^{[1
]}

Kubota, Hitoshi ^{[2
]}

Yakata, Satoshi ^{[2
]}

Fukushima, Akio ^{[2
]}

Yuasa, Shinji ^{[2
]}

Maehara, Hiroki ^{[3
]}

Tsunekawa, Koji ^{[3
]}

Djayaprawira, David D. ^{[3
]}

Suzuki, Yoshishige ^{[1
,2
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

[2] Spintron Res Ctr, Natl Inst Adv Ind Sci & Technol AIST, Tsukuba, Ibaraki 3058568, Japan

[3] Canon ANELVA Corp, Magnet Thin Film Dev Div, Proc Dev Ctr Gen Business Headquarters, Kanagawa 2158550, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 07期

关键词：

SPIN-TRANSFER-TORQUE; MULTILAYER; DRIVEN; EXCITATION; EMISSION; DEVICES;

D O I：

10.1143/APEX.3.073001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on rf current-induced excitation of the ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions under a perpendicular magnetic field. By choosing an appropriate external field and using an Fe-rich CoFeB free layer, the effective precession of the free layer could be excited. In a measurement of homodyne detection, a large dc output voltage of 180 mu V was obtained when an rf signal power of -25 dBm was applied. The sensitivity of this junction, as an rf rectifier, reaches about 170 mV/mW (280 mV/mW after impedance matching correction), which is the same order compared with that of a Schottky diode operated at room temperature.

引用

页数：3

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