Effect of keV ion irradiation on mechanical properties of hydrogenated amorphous silicon

The susceptibility of mechanical properties of hydrogenated amorphous silicon (a-Si H) to the implantation-enhanced disorder has been studied with the aim to extend the application field of this material in the technology of micro-electromechanical systems. Effect of key ion irradiation on the elastic modulus. E. of hardness, H. and of root-mean-squared roughness to silicon ion implantation has been determined The mechanical properties were evaluated by nanoindentation testing E of 119 GPa and H of 123 GPa were determined for the as-prepared a-Si H film. The implantation of silicon ions leads to a decrease in E and H, evaluated for a series of the implantation fluences in the range of 1 0 x 10(13)-5.0 x 10(16) cm(-2) Surface smoothing has been observed at high fluences and low ion energy of 18 keV, suggesting that ion beam may be used as a tool to reduce the roughness of the a-Si H surface, while keeping intact the mechanical properties inside the film. The conducted experiments show that it is possible to prepare a-Si H films with hardness and smoothness comparable to crystalline silicon. (C) 2010 Elsevier B V. All rights reserved