Finite Element Modeling of Resistive Switching in Nb2O5-based Memory Device

被引：0
|
作者：
Liu, Xinjun [1 ]
Nandi, Sanjoy Kumar [1 ,2 ,3 ]
Venkatachalam, Dinesh Kumar [1 ]
Li, Shuai [1 ]
Belay, Kidane [1 ]
Elliman, Robert Glen [1 ]
机构：
[1] Australian Natl Univ, Dept Elect Mat Engn, GPO Box 4, Canberra, ACT 0200, Australia
[2] Australian Natl Univ, Res Sch Astron & Astrophys, Canberra, ACT 0200, Australia
[3] Univ Chittagong, Dept Phys, Chittagong 4331, Bangladesh
来源：
2014 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2014) | 2014年
关键词：
Non-volatile memory; resistive switching memory (ReRAM); memory modeling; niobium oxide; KINETICS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physical electro-thermal model that describes bipolar resistance switching in Nb2O5-based memory devices is presented based on the finite element method. The switching mechanism is assumed to be controlled by the diffusion and drift of oxygen vacancies in conductive filaments (CFs). The proposed model correctly describes the microscopic morphology of the CF during the gradual reset transition, which provides an in-depth understanding of the operation mechanism in resistive-switching memory devices.
引用
收藏
页码：280 / 282
页数：3
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