Two-dimensional dopant profiling of ultrashallow junctions by electron holography

被引：7
|
作者：
Thesen, AE
Frost, BG
Joy, DC
机构：
[1] Univ Tennessee, Dept Phys, Knoxville, TN 37996 USA
[2] Univ Tennessee, Knoxville, TN 37996 USA
[3] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 06期
关键词：
D O I：
10.1116/1.1523022
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electron holography using a transmission electron microscope equipped with a Moellenstedt biprism has emerged as a viable technique for creating two-dimensional voltage maps of semiconductor devices. We. are presenting an introduction to this dopant profiling method. Practical details are given on sample preparation, instrumentational considerations, and data interpretation. (C) 2002 American Vacuum Society.
引用
收藏
页码：3063 / 3066
页数：4
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