Effect of Low Temperatures Irradiation on NPN Bipolar Junction Transistors

被引：0
|
作者：
Dardie, J. [1 ,2 ]
Boch, J. [2 ]
Michez, A. [2 ]
Guasch, C. [2 ]
Bouisri, S. [2 ]
Saigne, F. [2 ]
Bezerra, F. [3 ]
Favre, J. L. [1 ]
机构：
[1] TMI, Castelneau Le Lez, France
[2] Univ Montpellier, CNRS, IES, Montpellier, France
[3] CNES, Toulouse, France
来源：
2019 19TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2022年
关键词：
Total dose; low temperature irradiation; NPN bipolar transistor; current gain; forward-Gummel;
D O I：
10.1109/RADECS47380.2019.9745644
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of dose on NPN bipolar transistors is investigated for irradiation performed at low temperatures. Degradation of forward-Gummel curves and current gain is shown. After a low temperature irradiation there is two possible case. For irradiation temperature of 250K and above, there is no effect induced by the low temperature irradiation. For irradiation temperature of 225K and below a reduce current gain can be obtained for low Vbe.
引用
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页码：6 / 9
页数：4
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