Spectra of differential gain and linewidth enhancement factor in InGaAsN/GaAs single quantum well structures

被引：2
|
作者：
Wartak, M. S. [1 ]
Weetman, P. [1 ]
机构：
[1] Wilfrid Laurier Univ, Dept Phys & Comp Sci, Waterloo, ON N2L 3C5, Canada
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 07期
关键词：
D O I：
10.1002/pssa.200622318
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The differential gain and linewidth enhancement factor (alpha -factor) of a new material system InGaAsN/ GaAs is studied using the 10-band k center dot p Hamiltonian matrix. A self-consistent scheme which involves simultaneous solution of the Schrodinger and Poisson equations is applied. It is shown that spectra of differential gain and alpha-factor have significant variation versus nitrogen composition and carrier density. The determined parameters and their variations play important role in designing practical structures based on InGaAsN/GaAs material system. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2487 / 2494
页数：8
相关论文
共 50 条
  • [1] Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system
    Miloszewski, Jacek M.
    Wartak, M. S.
    Weetman, P.
    Hess, O.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)
  • [2] Gain, differential gain and linewidth enhancement factor of GaInNAs/GaAs strained quantum well lasers
    Alexandropoulos, D
    Adams, MJ
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) : 3523 - 3536
  • [3] Linewidth enhancement factor and modulation bandwidth of lattice matched 1.5 micron InGaAsN/GaAs quantum well lasers
    Seo, WH
    O'Brien, C
    Donegan, JF
    Lee, YS
    Kim, GH
    SEMICONDUCTOR LASERS AND LASER DYNAMICS, 2004, 5452 : 206 - 214
  • [4] Optical investigations of InGaAsN/GaAs single quantum well structures
    Sitarek, P
    Ryczko, K
    Sek, G
    Misiewicz, J
    Fischer, M
    Reinhardt, M
    Forchel, A
    SOLID-STATE ELECTRONICS, 2003, 47 (03) : 489 - 492
  • [5] Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes
    Kim, Kyoung Chan
    Han, Il Ki
    Yoo, Young Chae
    Lee, Jung Il
    Kim, Tae Geun
    IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS, 2006, : 336 - 337
  • [6] Broad gain spectra of single and multiple InGaAsN quantum well systems
    Miloszewski, Jacek M.
    Wartak, Marek S.
    Weetman, Philip
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (07): : 1697 - 1701
  • [7] Gain-dependent linewidth enhancement factor in the quantum dot structures
    Kim, Kyoung Chan
    Han, Il Ki
    Lee, Jung Il
    Kim, Tae Geun
    NANOTECHNOLOGY, 2010, 21 (13)
  • [8] LINEWIDTH ENHANCEMENT FACTOR IN GAAS/ALGAAS MULTI-QUANTUM-WELL LASERS
    OGASAWARA, N
    ITO, R
    MORITA, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L519 - L521
  • [9] Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers
    Gioannini, M
    Sevega, A
    Montrosset, I
    OPTICAL AND QUANTUM ELECTRONICS, 2006, 38 (4-6) : 381 - 394
  • [10] Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers
    Mariangela Gioannini
    Alberto Sevega
    Ivo Montrosset
    Optical and Quantum Electronics, 2006, 38 : 381 - 394
12345