Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes

被引：0
|
作者：
Kim, Kyoung Chan [1 ,2 ]
Han, Il Ki [1 ]
Yoo, Young Chae [1 ]
Lee, Jung Il [1 ]
Kim, Tae Geun [2 ]
机构：
[1] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea
[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
来源：
IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS | 2006年
关键词：
component; differential gain; linewidth enhancement facotr; quantum dop; laser diodes;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the differential gain and the linewidth enhancement factor (a-factor) from a 5-mu m-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that cc-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LID has an excellent beam quality under high-power operation.
引用
收藏
页码：336 / 337
页数：2
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