Influence of grain size on electronic sputtering of LiF thin films

被引:24
|
作者
Kumar, M. [1 ]
Khan, S. A.
Singh, F.
Tripathi, A.
Avasthi, D. K.
Pandey, A. C.
机构
[1] Univ Allahabad, Dept Phys, Allahabad 211002, Uttar Pradesh, India
[2] Interuniv Accelerator Ctr, New Delhi 110067, India
关键词
swift heavy ions; electronic sputtering; ERDA; LiF; nanometric films;
D O I
10.1016/j.nimb.2006.12.021
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The electronic sputtering from LiF thin films is investigated using 120 MeV Ag25+ ions in equilibrium charge state as projectiles. The sputter yield of Li and F from 160 mn thin polycrystalline LiF films with different grain sizes (22-58 nm) is measured with online elastic recoil detection analysis technique. The grain size of the films is estimated by glancing angle X-ray diffraction. The sputtering yield is of the order of 10(4) atoms/ion. A reduction in sputter yield is observed with increasing grain size. The results are discussed in terms of grain size effect along with thermal spike model. The electrons liberated in different directions from the ion track have different diffusion length according to its energy. The motion of the electrons is affected by the smaller grain size due to grain boundary scattering resulting in reduction in the mean diffusion length of the electrons, which finally enhanced energy deposition inside the grains and thus the sputter yield. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:328 / 332
页数:5
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