Effect of tungsten on the electrochromic behaviour of sol-gel dip coated molybdenum oxide thin films

被引:6
|
作者
Dhanasankar, M. [2 ]
Purushothaman, K. K. [1 ]
Muralidharan, G. [1 ]
机构
[1] Deemed Univ, Gandhigram Rural Inst, Dept Phys, Gandhigram 624302, Tamil Nadu, India
[2] Kamaraj Coll Engn & Technol, Dept Phys, Virudunagar 626001, India
关键词
Thin films; Sol-gel chemistry; Electrochemical properties; MOO3; WINDOWS; DEVICES;
D O I
10.1016/j.materresbull.2010.02.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The paper describes the results obtained on the performance of Mo oxide and mixed W/Mo oxide thin films for possible electrochromic applications. Mo and W/Mo oxide films were deposited on conductive (FTO) glass substrates using sol-gel dip coating method. The films were annealed at 250 degrees C for 30 min. The structure and morphology of Mo and W/Mo oxide films were examined using XRD, SEM and EDS. XRD results indicate the amorphous nature of the Mo and W/Mo oxide films annealed for 30 min. The CV measurements revealed that the films prepared with 10 wt.% of tungsten exhibit maximum anodic/cathodic diffusion coefficient of 24.99/12.71 x 10(-11) cm(2)/s. The same film exhibits a maximum transmittance variation (Delta T%) of 83.4% at 630 nm and 81.06% at 550 nm with the optical density of 1.00 and 1.13 respectively. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:542 / 545
页数:4
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