2-GHz Si power MOSFET technology

被引：22
|
作者：
Yoshida, I [1 ]
机构：
[1] Hitachi Ltd, Semicond Technol Dev Ctr, Semicond & Integrated Circuits Div, Tokyo 185, Japan
来源：
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年
关键词：
D O I：
10.1109/IEDM.1997.649453
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 2-GHz Si power MOSFET with 50% power-added efficiency and 1.0-W output power at a 3.6-V supply voltage has been developed for use as an RF high-power amplifier in wireless applications. This MOSFET achieves by using a 0.4-mu m gate power MOSFET with an Al-shorted metal-silicide/Si gate structure and a reduced gate finger width pattern.
引用
收藏
页码：51 / 54
页数：4
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