Chemical, optical, vibrational and luminescent properties of hydrogenated silicon-rich oxynitride films

被引：13
|
作者：
Kohli, S [1 ]
Theil, JA
Dippo, PC
Ahrenkiel, RK
Rithner, CD
Dorhout, PK
机构：
[1] Colorado State Univ, Dept Chem, Ft Collins, CO 80523 USA
[2] Agilent Technol, Santa Clara, CA 95051 USA
[3] Natl Renewable Energy Lab, Measurements & Characterizat Div, Golden, CO 80401 USA
来源：
THIN SOLID FILMS | 2005年 / 473卷 / 01期
关键词：
silicon-rich silicon oxynitride; XPS; ellipsometry; photoluminescence; thin film;
D O I：
10.1016/j.tsf.2004.07.054
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Foutier transform infrared and room temperature photoluminescence spectroscopy has been used to investigate the chemical, optical, vibrational and luminescent properties of Plasma Enhanced Chemical Vapor Deposited SiOxNy/H (0.17less than or equal toxless than or equal to0.96; 0.07less than or equal toyless than or equal to0.27), hydrogenated silicon-rich oxynitride (SRON). The linear dependence of the refractive index of the SRON films on the O/Si ratio was established. The photoluminescence from the SRON films were attributed to the embedded amorphous silicon clusters in the films. The dependence of luminescence maximum values on the O/Si and O/N ratios has been explored. We postulate that at O/Si ratio of 0.18 and an ON ratio of 2.0 (SiO0.N-18(0.09)) the film underwent a transformation from silicon-rich oxynitride to a-Si/H film with oxygen and nitrogen impurities. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：89 / 97
页数：9
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