Band-to-Band Tunneling in 3D Devices

被引：0

作者：

Filipovic, Lidija ^{[1
]}

Baumgartner, Oskar ^{[1
]}

Stanojevic, Zlatan ^{[1
]}

Kosina, Hans ^{[1
]}

机构：

[1] TU Wien, Inst Microelect, A-1040 Vienna, Austria

来源：

2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE) | 2014年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This work focuses on studying band-to-band tunneling in 3D devices, while considering variations in material properties (mass, doping), applied bias, or geometry. A simulation study of cylindrical nanowires, tapered structures and doping concentration variation demonstrates the importance of 3D effects in band-to-band tunneling current computation.

引用

页数：4

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