Monte Carlo simulation of band-to-band tunneling in silicon devices

A band-to-band tunneling model including trap-assisted tunneling has been implemented in our ensemble full band Monte Carlo simulator. Four kinds of hand-to-hand tunneling mechanisms are taken into account. All the parameters in the band-to-band tunneling model are verified by comparing the pn junction reverse current with the experimental data. Then, gate- induced-drain-leakage currents caused by hand-to-hand tunneling in a 45 nm gate length n-metal-oxide-semiconductor field-effect-transistor are investigated. Results indicate that band-to-band tunneling can cause additional hot holes which becomes an important issue for the device reliability. Moreover, The gate-induced-drain-leakage currents caused by band-to-band tunneling in parallel with Si/SiO2 interface and normal to Si/SiO2 interface are compared. The influence of drain voltage on the two components of the gate-induced-drain-leakage currents is considered.