Reduction of Accumulation Capacitance in Direct-Contact HfO2/p-Type Si Metal-Oxide-Semiconductor Capacitors

被引：1

作者：

Abe, Yasuhiro ^{[1
]}

Miyata, Noriyuki ^{[1
,2
]}

Nohira, Hiroshi ^{[1
]}

Yasuda, Tetsuji ^{[2
]}

机构：

[1] Tokyo City Univ, Grad Sch Engn, Setagaya Ku, Tokyo 1588557, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 06期

基金：

日本学术振兴会;

关键词：

D O I：

10.1143/JJAP.49.060202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed a significant reduction in accumulation capacitance of direct-contact HfO2/p-type Si structures compared to that of HfO2/n-type Si structures. The difference in capacitance corresponds to an estimated difference of approximately 0.26 nm in equivalent oxide thickness. We suggest that this capacitance reduction reflects a change in surface-hole distribution due to interface-dipole-induced potential. (C) 2010 The Japan Society of Applied Physics

引用

页码：0602021 / 0602023

页数：3

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