Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO2/Si Metal-Oxide-Semiconductor Field-Effect Transistors

被引：7
|
作者：
Miyata, Noriyuki [1 ]
Ishii, Hiroyuki [1 ]
Itatani, Taro [1 ]
Yasuda, Tetsuji [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 10期
基金：
日本学术振兴会;
关键词：
PHONON-SCATTERING; REMOTE PHONON; MOSFETS;
D O I：
10.1143/APEX.4.101101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal-oxide-semiconductor field-effect transistors with HfO2/thickness-graded SiO2/Si structures were fabricated to examine what effect the electric dipoles at the direct-contact HfO2/Si interfaces have on electron channel mobility. The degradation in mobility observed for direct-contact HfO2/Si devices could not be ascribed to dipole scattering, but to remote Coulomb scattering due to oxide charges in the HfO2 layer. Our results suggest that interface dipoles are not a major concern in terms of the mobility criterion. (C) 2011 The Japan Society of Applied Physics
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页数：3
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