Comparative mid- and far-infrared spectroscopy of nitrogen-oxygen complexes in silicon

被引：3
|
作者：
Alt, H. Ch. [1 ]
Wagner, H. E. [1 ]
机构：
[1] Munich Univ Appl Sci, Dept Engn Phys, D-80335 Munich, Germany
来源：
PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 23-24期
关键词：
Czochralski silicon; Nitrogen oxygen complexes; Shallow donors; Infrared spectroscopy; ABSORPTION PEAKS; CZ SILICON; DEFECTS; DONORS;
D O I：
10.1016/j.physb.2009.08.104
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A comparative infrared absorption study between electronic and vibrational states of nitrogen-oxygen related shallow donors has been performed in nitrogen-doped Czochralski silicon. Quasi-thermodynamic equilibrium conditions have been established by long-term annealing between 600 and 1000 degrees C. Different members of the N-O shallow donor family show a specific thermal decay in this temperature range, in disagreement with present theoretical modeling. Based on this characteristic behavior, we find two local vibrational modes at 1070 and 860 cm(-1) which can be assigned to the most prominent shallow-donor species with the chemical composition NO(2). The implication on the microscopic structure of this complex is discussed. (C) 2009 Elsevier By. All rights reserved.
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页码：4549 / 4551
页数：3
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