Effect of copper vanadate sintering aid on the microstructure and dielectric properties of (Zn, Mg)TiO3 ceramics

Copper vanadate compounds (abbreviated to CVO) were synthesized to accelerate the sinterability of (Zn0.7Mg0.3)TiO3 ceramics (abbreviated to ZMT). CVO-doped ZMT ceramics were prepared by a conventional mixed-oxide method. The phase structure, morphology and dielectric properties of ceramics were investigated. The results show that ZMT ceramics with 0.2 wt% CVO addition can be well sintered to approach 98 % theoretical density at 950 A degrees C. At the same time, CVO addition inhibits the exaggerated grain growth and improves morphology of ceramics samples effectively. 0.2 wt% CVO doped ZMT ceramics sintered at 950 A degrees C exhibits good microwave dielectric properties of epsilon (r) = 22 and Q x f = 11,700 GHz. Due to their good dielectric properties, low firing characteristics, 0.2 wt% CVO doped ZMT ceramics can serve as the promising high-frequency dielectric capacitor requiring low sintering temperature.