Quantum-Well-Induced Giant Spin-Orbit Splitting

被引：95

作者：

Mathias, S. ^{[1
,2
,3
,4
]}

Ruffing, A. ^{[1
,2
]}

Deicke, F. ^{[1
,2
]}

Wiesenmayer, M. ^{[5
]}

Sarkar, I. ^{[1
,2
]}

Bihlmayer, G. ^{[6
,7
]}

Chulkov, E. V. ^{[8
]}

Koroteev, Yu. M. ^{[9
]}

Echenique, P. M. ^{[8
]}

Bauer, M. ^{[5
]}

Aeschlimann, M. ^{[1
,2
]}

机构：

[1] Univ Kaiserslautern, Dept Phys, D-67663 Kaiserslautern, Germany

[2] Univ Kaiserslautern, Res Ctr OPTIMAS, D-67663 Kaiserslautern, Germany

[3] Univ Colorado, JILA, Boulder, CO 80309 USA

[4] Natl Inst Stand & Technol, Boulder, CO 80309 USA

[5] Univ Kiel, Inst Expt & Angew Phys, D-24098 Kiel, Germany

[6] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[7] Forschungszentrum Julich, Inst Adv Simulat, D-52425 Julich, Germany

[8] CSIC UPV EHU, DIPC & CFM, Ctr Mixto, Dept Fis Mat, San Sebastian 20080, Spain

[9] RAS, Inst Strength Phys & Mat Sci, Tomsk 634021, Russia

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 06期

关键词：

SURFACE;

D O I：

10.1103/PhysRevLett.104.066802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the observation of a giant spin-orbit splitting of quantum-well states in the unoccupied electronic structure of a Bi monolayer on Cu(111). Up to now, Rashba-type splittings of this size have been reported exclusively for surface states in a partial band gap. With these quantum-well states we have experimentally identified a second class of states that show a huge spin-orbit splitting. First-principles electronic structure calculations show that the origin of the spin-orbit splitting is due to the perpendicular potential at the surface and interface of the ultrathin Bi film. This finding allows for the direct possibility to tailor spin-orbit splitting by means of thin-film nanofabrication.

引用

页数：4

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