Structural distortion and ferroelectric properties of SrBi2(Ta1-xNbx)2O9

被引:158
|
作者
Shimakawa, Y
Kubo, Y
Tauchi, Y
Kamiyama, T
Asano, H
Izumi, F
机构
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058577, Japan
[3] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan
关键词
D O I
10.1063/1.1319509
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric materials of the SrBi2(Ta1-xNbx)(2)O-9 solid-solution system were synthesized, and their structural and ferroelectric properties were investigated. Atomic displacements of the ions in the (Ta,Nb)O-6 octahedron significantly increase as x increases, which leads to more structural distortion of the perovskite-type unit. The Bi2O2 layer, in contrast, is less distorted in SrBi2Nb2O9 than in SrBi2Ta2O9. The contribution of the perovskite-type unit to total ferroelectric polarization is greater in the SrBi2Nb2O9 sample, while that of the Bi2O2 layer is less; consequently, the total calculated polarization slightly increases. The ferroelectric Curie temperature also increases from 300 (SrBi2Ta2O9) to 440 degrees C (SrBi2Nb2O9). Three short (Ta,Nb)-O bonds in the (Ta,Nb)O-6 octahedron, whose lengths are less than 2 Angstrom, have a covalent character, and the substitution of Nb for Ta makes the bonds more covalent. The strong covalent interaction of the (Ta,Nb)-O bonds increases the structural distortion, resulting in the higher ferroelectric Curie temperature and the larger contribution of the perovskite-type unit to the total spontaneous ferroelectric polarization. (C) 2000 American Institute of Physics. [S0003-6951(00)01543-6].
引用
收藏
页码:2749 / 2751
页数:3
相关论文
共 50 条
  • [11] Structure Development Studies of SrBi2(Ta1−xNbx)2O9 Thin Films
    Tze Chiun Chen
    Tingkai Li
    Xubai Zhang
    Seshu B. Desu
    Journal of Materials Research, 1997, 12 : 2165 - 2174
  • [12] Structure development studies of SrBi2(Ta1-xNbx)(2)O-9 thin films
    Chen, TC
    Li, TK
    Zhang, XB
    Desu, SB
    JOURNAL OF MATERIALS RESEARCH, 1997, 12 (08) : 2165 - 2174
  • [13] Low temperature direct crystallization of SrBi2(Ta1-xNbx)2O9 thin films by thermal metalorganic chemical vapor deposition and their properties
    Mitsuya, M
    Nukaga, N
    Saito, K
    Osada, M
    Funakubo, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (5A): : 3337 - 3342
  • [14] Direct preparation of crystalline SrBi2(Ta1-xNbx)2O9 thin films by thermal metalorganic chemical vapor deposition at low temperature
    Mitsuya, M
    Nukaga, N
    Funakubo, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (8A): : L822 - L824
  • [15] Sintering and properties of SrBi2(Ta1-xVx)2O9 ceramics
    Shyu, JJ
    Lee, CC
    JOURNAL OF MATERIALS SCIENCE, 2003, 38 (04) : 721 - 726
  • [16] Microstructural and electric properties of bismuth-layered structured ceramics -: SrBi2(Ta1-xNbx)O9
    Zanetti, SM
    Bueno, PR
    Sotilo, VCM
    Leite, ER
    Longo, E
    Varela, JA
    EURO CERAMICS VII, PT 1-3, 2002, 206-2 : 1369 - 1372
  • [17] Direct preparation of crystalline SrBi2(Ta1-xNbx)2O9 thin films by thermal metalorganic chemical vapor deposition at low temperature
    Mitsuya, Masatoshi
    Nukaga, Norimasa
    Funakubo, Hiroshi
    Japanese Journal of Applied Physics, Part 2: Letters, 2000, 39 (8 A):
  • [18] Quantitative effects of preferred orientation and impurity phases on ferroelectric properties of SrBi2(Ta1-xNbx)2O9 thin films measured by X-ray diffraction reciprocal space mapping
    Saito, K
    Yamaji, I
    Akai, T
    Mitsuya, M
    Funakubo, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (2A): : 539 - 543
  • [19] Sintering and properties of SrBi2(Ta1−xVx)2O9 ceramics
    Jiin-Jyh Shyu
    Chih-Chung Lee
    Journal of Materials Science, 2003, 38 : 721 - 726
  • [20] Preparation and characterization of SrBi2(Ta1-xNbx)2O9 thin films by metalorganic chemical vapor deposition from two organometallic source bottles
    Mitsuya, M
    Ishikawa, K
    Nukaga, N
    Funakubo, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (6B): : L620 - L622