Enhanced terahertz emission from GaAs and GaAs-MnAs nanowires

被引：0
|
作者：
Koroliov, A. [1 ]
Adomavicius, R. [1 ]
Arlauskas, A. [1 ]
Siusys, A. [2 ]
Sadowski, J. [2 ,3 ]
Reszka, A. [2 ]
Krotkus, A. [1 ]
机构：
[1] Ctr Phys Sci & Technol, A Gostauto 11, LT-01108 Vilnius, Lithuania
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] Lund Univ, Max Lab, S-22100 Lund, Sweden
来源：
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
THz pulse emission from GaAs and GaAs-MnAs nanowire (NW) samples illuminated by femtosecond laser pulses has been studied. The amplitude of THz pulses emitted by nanowire samples was more than twice larger than that radiated from GaAs substrate. It was found that terahertz emissivity of NW samples rapidly decreases with increasing laser photon energy - behavior that could be explained by localized surface plasmon resonances in GaAs and GaAs-MnAs NWs. The plasmon enhanced absorption has been identified as a major factor for intense THz emission from our samples.
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