A selective semiconductor gas sensor based on surface photovoltage

被引：1

作者：

Faglia, G ^{[1
]}

Baratto, C ^{[1
]}

Comini, E ^{[1
]}

Sberveglieri, G ^{[1
]}

机构：

[1] INFM, I-25133 Brescia, Italy

来源：

NANO- AND MICROTECHNOLOGY: MATERIALS, PROCESSES, PACKAGING, AND SYSTEMS | 2002年 / 4936卷

关键词：

semiconductor oxides; gas sensors; surface photovoltage spectroscopy;

D O I：

10.1117/12.476101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The work function of tin oxide has been studied by the kelvin probe method as a function of the exposure to different gaseous species. Characterisation has been performed in dark and in presence of sub band and supra band gap light (Surface Photovoltage measurements). The light changes the response, towards gases in particular at room temperature. The results foresee the possibility to improve semiconductor sensor selectivity by using monochromatic light at well defined frequency able to activate/deactivate surface states where species are adsorbed.

引用

页码：186 / 193

页数：8

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