GaN Based Cyan Light-Emitting Diodes with GHz Bandwidth

被引：0
|
作者：
Shi, Jin-Wei [1 ,2 ]
Chi, Kai-Lun [1 ]
Wun, Jhih-Min [1 ]
Bowers, J. -E. [2 ]
Sheu, J. -K. [3 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Taoyuan, Taiwan
[2] Univ Calif Santa Barbara, Elect & Comp Engn Dept, Santa Barbara, CA 93106 USA
[3] Natl Cheng Kung Univ, Dept Photon, Tainan 70101, Taiwan
来源：
2016 IEEE PHOTONICS CONFERENCE (IPC) | 2016年
关键词：
COMMUNICATION; NM;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carrier lifetime limited bandwidth in proposed III-Nitride LED is relaxed with further improvement in its internal quantum efficiency. Moderate output power (1.7mW) with record-high 3-dB electrical-to-optical bandwidth (1GHz) among all reported visible LEDs is demonstrated. (C)2016 Optical Society of America
引用
收藏
页码：623 / 624
页数：2
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