A time-delay equivalent-circuit model of ultrafast p-i-n photodiodes

被引：29

作者：

Wang, G ^{[1
]}

Tokumitsu, T ^{[1
]}

Hanawa, I ^{[1
]}

Yoneda, Y ^{[1
]}

Sato, K ^{[1
]}

Kobayashi, M ^{[1
]}

机构：

[1] Fujitsu Quantum Devices Ltd, Yamanashi 4093883, Japan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2003年 / 51卷 / 04期

关键词：

equivalent circuit; optical-frequency response; photodiodes (PDs); scattering parameters; stored charge; time delay;

D O I：

10.1109/TMTT.2003.809642

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A time-delay equivalent-circuit model of ultrafast p-i-n photodiodes (PDs) is proposed to describe the operation at high-input power levels. This model includes both the carrier transit-induced time-delay effect and stored charge effect of p-i-n PDs in high-power operation. These effects were represented as a linear RC circuit [1] and capacitance, respectively, both combined in parallel to a voltage-controlled current source. The validity of this model was confirmed with good curve fitting to the measured optical-frequency responses of an ultrafast side-illuminated p-i-n PD.

引用

页码：1227 / 1233

页数：7

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