Realization of quantum cascade laser operating at room temperature

被引：0

作者：

Li, CM ^{[1
]}

Liu, FQ ^{[1
]}

Jin, P ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 250卷 / 3-4期

关键词：

crystal structure; lattice-mismatch; microsctucture; radiation; X-ray diffraction; molecular beam epitaxy; infrared devices; quantum cascade laser;

D O I：

10.1016/S0022-0248(02)02351-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control of the epilayer thickness and composition. Intersubband absorption from the whole structure of the QC laser is used to monitor the wavelength of the QC laser and the material quality. Path for growth of high-quality InP-based InGaAs/InAlAs quantum cascade laser material is realized. The absorption between two quantized energy levels is achieved at similar to4.7 mum. Room temperature laser action is achieved at lambda approximate to 5.1 - 5.2 mum. For some devices, if the peak output power is kept at 2 mW, quasi-continuous wave operation at room temperature can persist for more than I It. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：285 / 289

页数：5

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