Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

被引:1
|
作者
Huang, CY
Wu, MC [1 ]
Yu, HC
Jiang, WJ
Wang, JM
Sung, CP
机构
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[3] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu 310, Taiwan
来源
关键词
D O I
10.1116/1.1775004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, we investigate the influence of electrostatic discharge (ESD) stress voltage on the device performance of 850 nm vertical-cavity surface-emitting lasers (VCSELs). The ESD effect induces dark-region defects, which act as nonradiative recombination centers in the active layer and increase the leakage current and degrade the light output power. Without ESD stress voltage, the VCSELs exhibit multiple transverse mode. However, the devices exhibit a weak but single fundamental mode with smaller beam divergence by increasing the stress voltage up to 2.6 kv. In addition, the VCSELs have serious degradation in light output. power and a lifetime of less than 5 h at stress voltage beyond the ESD threshold voltage of 1.2 kV (C) 2004 American Vacuum Society.
引用
收藏
页码:1970 / 1973
页数:4
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