Electronic structures and optical properties of ZnO doped with Ba atoms: the first-principles calculations

被引:0
|
作者
Chen, H. M. [1 ]
Chen, Z. P. [1 ]
Zhang, R. [1 ]
Lin, X. L. [1 ]
Pan, F. C. [1 ]
Ma, Z. [1 ]
Xu, J. N. [1 ]
Zhao, H. S. [2 ]
机构
[1] Ningxia Univ, Sch Phys & Elect Elect Engn, Yinchuan 750021, Peoples R China
[2] Xingtai Univ, Dept Phys, Xingtai 054001, Peoples R China
基金
中国国家自然科学基金;
关键词
Bulk Zn1-xBaxO2; First-principles calculations; Electronic structure; Optical properties; DIELECTRIC-PROPERTIES; MAGNETIC-PROPERTIES; THIN-FILMS; GAP; NANOPARTICLES; NANOSHEET; MOLECULES; SURFACES; NI; CO;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structures and the optical properties of wurtzite ZnO doped with Ba atoms (Zn1-xBaxO) are studied using first-principles based on the framework of plane wave ultra-soft pseudo-potential approximation. The calculated results show that the energy band gap of Zn1-xBaxO is amplified and the main peaks of the imaginary part of dielectric function, the reflection spectrum and the absorption spectrum shift to the side of lower energy with the concentration of doped Ba increase. It is also found that the onset of absorption spectrum shifts to the side of higher energy with the dopant increase and the Zn1-xBaxO compound has a new absorption peak compared with pure ZnO. The blue-shift phenomenon and the presence of the new absorption peak imply that Zn1-xBaxO can be as a potentially candidate for optoelectronic materials.
引用
收藏
页码:207 / 211
页数:5
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