Electronic structures and optical properties of ZnO doped with Ba atoms: the first-principles calculations

被引:0
|
作者
Chen, H. M. [1 ]
Chen, Z. P. [1 ]
Zhang, R. [1 ]
Lin, X. L. [1 ]
Pan, F. C. [1 ]
Ma, Z. [1 ]
Xu, J. N. [1 ]
Zhao, H. S. [2 ]
机构
[1] Ningxia Univ, Sch Phys & Elect Elect Engn, Yinchuan 750021, Peoples R China
[2] Xingtai Univ, Dept Phys, Xingtai 054001, Peoples R China
基金
中国国家自然科学基金;
关键词
Bulk Zn1-xBaxO2; First-principles calculations; Electronic structure; Optical properties; DIELECTRIC-PROPERTIES; MAGNETIC-PROPERTIES; THIN-FILMS; GAP; NANOPARTICLES; NANOSHEET; MOLECULES; SURFACES; NI; CO;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structures and the optical properties of wurtzite ZnO doped with Ba atoms (Zn1-xBaxO) are studied using first-principles based on the framework of plane wave ultra-soft pseudo-potential approximation. The calculated results show that the energy band gap of Zn1-xBaxO is amplified and the main peaks of the imaginary part of dielectric function, the reflection spectrum and the absorption spectrum shift to the side of lower energy with the concentration of doped Ba increase. It is also found that the onset of absorption spectrum shifts to the side of higher energy with the dopant increase and the Zn1-xBaxO compound has a new absorption peak compared with pure ZnO. The blue-shift phenomenon and the presence of the new absorption peak imply that Zn1-xBaxO can be as a potentially candidate for optoelectronic materials.
引用
收藏
页码:207 / 211
页数:5
相关论文
共 50 条
  • [1] First-principles Calculations for Electronic Structures of Flourine-doped ZnO
    Wan, Qixin
    Chen, Lanli
    Xiong, Zhihua
    Li, Dongmei
    [J]. MANUFACTURING SCIENCE AND TECHNOLOGY, PTS 1-3, 2011, 295-297 : 1319 - 1321
  • [2] First-principles calculations of electronic structure and optical properties of Be-doped ZnO monolayer
    Luan, Zhaohui
    Sun, Dan
    Tan, Changlong
    Tian, Xiaohua
    Huang, Yuewu
    [J]. INTEGRATED FERROELECTRICS, 2017, 179 (01) : 84 - 94
  • [3] The structural, electronic and optical properties of Nd doped ZnO using first-principles calculations
    Wen, Jun-Qing
    Zhang, Jian-Min
    Chen, Guo-Xiang
    Wu, Hua
    Yang, Xu
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2018, 98 : 168 - 173
  • [4] First-principles Calculations for Electronic Structures of Carbon-doped ZnO
    Wan, Qixin
    Liu, Weihua
    Xiong, Zhihua
    Li, Dongmei
    Shao, Bilin
    [J]. 6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING, IMAGING, AND SOLAR ENERGY, 2012, 8419
  • [5] The first-principles study of electronic structures, magnetic and optical properties for Ce-doped ZnO
    Zhang, Fuchun
    Gan, Quan
    Yan, Meiru
    Cui, Hongwei
    Zhang, Haijuan
    Chao, Dandan
    Guo, Jie
    Quan, Guohao
    Zhang, Weihu
    [J]. INTEGRATED FERROELECTRICS, 2016, 172 (01) : 87 - 96
  • [6] First-principles calculations of electronic structure and optical properties of Boron-doped ZnO with intrinsic defects
    Peng, Yen-Chun
    Chen, Chieh-Cheng
    Wu, Hsuan-Chung
    Lu, Jong-Hong
    [J]. OPTICAL MATERIALS, 2015, 39 : 34 - 39
  • [7] Cu-Doped ZnO Electronic Structure and Optical Properties Studied by First-Principles Calculations and Experiments
    Ma, Zhanhong
    Ren, Fengzhang
    Ming, Xiaoli
    Long, Yongqiang
    Volinsky, Alex A.
    [J]. MATERIALS, 2019, 12 (01)
  • [8] First-Principles Calculations of the Electronic Structure and Optical Properties of Yttrium-Doped ZnO Monolayer with Vacancy
    Wu, Qian
    Wang, Ping
    Liu, Yan
    Yang, Han
    Cheng, Jingsi
    Guo, Lixin
    Yang, Yintang
    Zhang, Zhiyong
    [J]. MATERIALS, 2020, 13 (03)
  • [9] First-principles study of the electronic structures and optical properties of C-F-Be doped wurtzite ZnO
    Zuo Chunying
    Jing, Wen
    Cheng, Zhong
    [J]. JOURNAL OF SEMICONDUCTORS, 2012, 33 (07)
  • [10] First-principles study of the electronic structures and optical properties of C-F-Be doped wurtzite ZnO
    左春英
    温静
    钟成
    [J]. Journal of Semiconductors, 2012, 33 (07) : 1 - 6