Synthesis of Si nanoparticles with narrow size distribution by pulsed laser ablation

被引：11
|
作者：
Khang, Yoonho [1 ]
Lee, Joohyun [2 ]
机构：
[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 446711, South Korea
[2] Samsung Adv Inst Technol, Yongin 446712, South Korea
来源：
JOURNAL OF NANOPARTICLE RESEARCH | 2010年 / 12卷 / 04期
关键词：
Si nanoparticle; Pulsed laser ablation; Size distribution; HV bias; Nanomanufacturing; GAS; NANOCRYSTALS;
D O I：
10.1007/s11051-009-9669-z
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We synthesized Si nanoparticles by pulsed nanosecond-laser ablation. We applied a positive voltage bias during laser irradiation and effectively reduced size distribution. Scanning electron micrographs of samples showed the nanoparticles to be highly non-agglomerated. Si nanoparticles have the average diameter of 4-5 nm, the geometrical standard deviation of 1.35, and the density of 1.6 x 10(12)/cm(2). A MOS device showed excellent charge trap behavior with a flat-band voltage shift over 7 V, which can be applied for memory device applications.
引用
收藏
页码：1349 / 1354
页数：6
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