Synthesis of Si nanoparticles with narrow size distribution by pulsed laser ablation

被引：11

作者：

Khang, Yoonho ^{[1
]}

Lee, Joohyun ^{[2
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 446711, South Korea

[2] Samsung Adv Inst Technol, Yongin 446712, South Korea

来源：

JOURNAL OF NANOPARTICLE RESEARCH | 2010年 / 12卷 / 04期

关键词：

Si nanoparticle; Pulsed laser ablation; Size distribution; HV bias; Nanomanufacturing; GAS; NANOCRYSTALS;

D O I：

10.1007/s11051-009-9669-z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We synthesized Si nanoparticles by pulsed nanosecond-laser ablation. We applied a positive voltage bias during laser irradiation and effectively reduced size distribution. Scanning electron micrographs of samples showed the nanoparticles to be highly non-agglomerated. Si nanoparticles have the average diameter of 4-5 nm, the geometrical standard deviation of 1.35, and the density of 1.6 x 10(12)/cm(2). A MOS device showed excellent charge trap behavior with a flat-band voltage shift over 7 V, which can be applied for memory device applications.

引用

页码：1349 / 1354

页数：6

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