Full integration of highly manufacturable 512Mb PRAM based on 90nm technology

被引：0

作者：

Oh, J. H. ^{[1
]}

Park, J. H. ^{[1
]}

Lim, Y. S. ^{[2
]}

Lim, H. S. ^{[2
]}

Oh, Y. T. ^{[1
]}

Kim, J. S. ^{[1
]}

Shin, J. M. ^{[1
]}

Park, J. H. ^{[1
]}

Song, Y. J. ^{[1
]}

Ryoo, K. C. ^{[1
]}

Lim, D. W. ^{[1
]}

Park, S. S. ^{[1
]}

Kim, J. I. ^{[1
]}

Kim, J. H. ^{[1
]}

Yu, J. ^{[1
]}

Yeung, F. ^{[1
]}

Jeong, C. W. ^{[1
]}

Kong, J. H. ^{[1
]}

Kang, D. H. ^{[1
]}

Koh, G. H. ^{[1
]}

Jeong, G. T. ^{[1
]}

Jeong, H. S. ^{[1
]}

Kim, Kinarn ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Div, Adv Technol Dev Team, San 24 Nongseo Ri, Yongin 449900, Kyunggi Do, South Korea

[2] Samsung Elect Co Ltd, Semicond R&D Div, Proc Dev Team, Yongin 449900, South Korea

来源：

2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully functional 512Mb PRAM with 0.047 mu m(2) (5.8F(2)) cell size was successfully fabricated using 90nm diode technology in which we developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge2Sb2Te5. The 512Mb PRAM showed excellent electrical properties of sufficiently large on-current and stable phase transition behavior. The reliability of the 512Mb chip was also evaluated as a write-endurance over 1E5 cycles and a data retention time over 10 years at 85 degrees C.

引用

页码：515 / +

页数：2

共 42 条

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