Dopant segregation and giant magnetoresistance in manganese-doped germanium

被引：80
|
作者：
Li, A. P. [1 ]
Zeng, C.
van Benthem, K.
Chisholm, M. F.
Shen, J.
Rao, S. V. S. Nageswara
Dixit, S. K.
Feldman, L. C.
Petukhov, A. G.
Foygel, M.
Weitering, H. H.
机构：
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
[3] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
[4] Vanderbilt Univ, Interdisciplinary Program Mat Sci, Nashville, TN 37235 USA
[5] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
[6] S Dakota Sch Mines & Technol, Dept Phys, Rapid City, SD 57701 USA
来源：
PHYSICAL REVIEW B | 2007年 / 75卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.75.201201
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Dopant segregation in a MnxGe1-x dilute magnetic semiconductor leads to a remarkable self-assembly of Mn-rich nanocolumns, embedded in a fully compensated Ge matrix. Samples grown at 80 degrees C display a giant positive magnetoresistance that correlates directly with the distribution of magnetic impurities. Annealing at 200 degrees C increases Mn substitution in the host matrix above the threshold for the insulator-metal transition, while maintaining the columnar morphology, and results in global ferromagnetism with conventional negative magnetoresistance. The qualitative features of magnetism and transport in this nanophase material are thus extremely sensitive to the precise location and distribution of the magnetic dopants.
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页数：4
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