Specific features of magnetoresistance in overcompensated manganese-doped silicon

被引：6
|
作者：
Bakhadirkhanov, M. K. [1 ]
Mavlonov, G. H. [1 ]
Iliev, X. M. [1 ]
Ayupov, K. S. [1 ]
Sattarov, O. E. [1 ]
Tachilin, C. A. [1 ]
机构：
[1] Tashkent State Tech Univ, Tashkent 100095, Uzbekistan
来源：
SEMICONDUCTORS | 2014年 / 48卷 / 08期
关键词：
LOW-TEMPERATURE-DIFFUSION; NEGATIVE MAGNETORESISTANCE; RESONANCE; FIELD;
D O I：
10.1134/S106378261408003X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is shown experimentally that a rather high negative magnetoresistance in silicon is observed not only in compensated p-(Si:B):Mn, but also in overcompensated n-(Si:B):Mn with a Fermi level of F = E (C) - 0.35 eV A center dot E (C) - 0.55 eV. The magnitude and the temperature range of the negative magnetoresistance in materials of this kind are determined by the position of the Fermi level.
引用
收藏
页码：986 / 988
页数：3
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